5.0 a super fast rectifier feat ures ! diff us ed junction ! low forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability m e chanical data c ! c ase: molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. * g lass passivated forms are available upon request not e: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 5. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. ER501 - er508 1 of 2 ! le a d free: for rohs / lead free version pf ns v 0.975 35 70 105 140 210 280 350 420 v 50 100 150 200 300 400 500 600 v p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a verage rectified output current (note 1) @t a = 55c i o 5.0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 150 a forward v oltage @i f = 5 .0a v fm peak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 5.0 100 a revers e recovery time (note 2) t rr t ypical junction capacitance (note 3) c j operat ing temperature range t j -65 t o +150 c s torage temperature range t st g -65 t o +150 c 1.30 1.70 35 100 60 z ibo seno electronic engineering co., ltd. www.senocn.com ER501 ? er508 characteri sti c symbol ER501 er502 er503 er504 er505 er506 er507 er508 unit do-201 ad di m min max a 25. 4 ? b 8. 50 9.50 c 1.20 1.30 d 5. 0 5.60 a ll d imensions in mm do-201 a d di m min max a 24. 5 ? b 7. 20 9.50 c 1.10 1.30 d 5. 00 5.60 a ll d imensions in mm a l l d a t a s h e e t
10 100 200 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 peak forward surge current 8.3ms single half sine-wave 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5 /10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 10 100 1000 1 10 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r 1 2 3 4 5 02 5 50 75 100 125 150 175 i , average fwd rectified current (a) (a v) t , ambient temperature ( c) fig. 1 forward current derating curve a single phase half wave resistive or inductive load er 501 - er504 er505 - er508 2 of 2 0.01 0.1 1.0 10 100 0.6 1.0 1.4 1.8 t = 25 c j pulse width = 300 s 2% duty cycle m v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f i , instantaneous forward current (a) f er 501 - er504 er 505 - er506 er 507 - er508 z ibo seno electronic engineering co., ltd. www.senocn.com ER501 - er508 ER501 ? er508 a l l d a t a s h e e t
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